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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1912 description collector-emitter breakdown voltage- : v (br)ceo = 60v(min) wide area of safe operation low collector saturation voltage applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current-continuous 3 a i cm collector current-peak 8 a collector power dissipation @t a =25 1.75 p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1912 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 60 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be (on) base-emitter on voltage i c = 0.5a; v ce = 5v 1.0 v i cbo collector cutoff current v cb = 40v; i e = 0 100 a i ebo emitter cutoff current v eb = 4v; i c = 0 100 a h fe-1 dc current gain i c = 0.5a; v ce = 5v 70 280 h fe-2 dc current gain i c = 3a; v ce = 5v 20 c ob output capacitance i e = 0; v cb = 10v, f= 1mhz 40 pf f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 100 mhz ? h fe- 1 classifications q r s 70-140 100-200 140-280 isc website www.iscsemi.cn 2 |
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